Hyderabad
08048036175
+919848399491
General Lab Supplies by MNC CHEMICALS SURGICALS

Diac Characteristics Apparatus with two meters

INR 5543
In stockcod available
Phone Number

08048036175

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Email Address mnc.naveen@gmail.com

Mon-Thu: 10 AM - 2 PM • Fri: 3 PM - 7AM

Address Correspondence Address: Shop No. 20, 2nd Floor, Srirama Tower, Bogulkunta, Telangana

Hyderabad, India, 500001

Description

An IGBT Characteristics Apparatus is a laboratory instrument used to study and demonstrate the static and dynamic characteristics of Insulated Gate Bipolar Transistors (IGBTs). This apparatus typically includes built-in regulated power supplies, meters for measuring voltage and current, and an IGBT mounted for easy connection and observation of device behavior under various input conditions. Apparatus Overview The IGBT Characteristics Apparatus is designed to: Analyze the input and output characteristics of IGBTs by varying the gate and collector-emitter voltages. Allow measurement of relevant parameters, such as collector current, gate voltage, and collector-emitter voltage, using integrated analog or digital meters. Demonstrate IGBT switching performance and response under laboratory-safe voltages and currents. IGBT Device Background The IGBT (Insulated Gate Bipolar Transistor) is a three-terminal semiconductor power device combining the high input impedance and fast switching of a MOSFET with the high current-carrying capability of a BJT. It consists of four alternating NPNP layers, controlled by a gate-insulated MOS structure. The main terminals are the collector (C), emitter (E), and gate (G), with the IGBT exhibiting high voltage and current performance ideal for switching and amplification in modern power electronics. Working Principle and Experiment When voltage is applied to the gate terminal, it enables or disables current conduction between collector and emitter: A sufficiently positive gate-emitter voltage allows carrier flow, turning the device on and allowing collector current. Lowering the gate-emitter voltage below threshold turns the device off, with nearly zero collector current. Typical experiments with the apparatus include: Plotting transfer and output characteristics. Observing the device's switching speed and performance. Comparing its behavior to other semiconductor devices like MOSFETs and BJTs. Features and Components Regulated DC Power Supplies for biasing gate and collector-emitter circuits. Meters (voltmeter, ammeter) to monitor input/output parameters. Test sockets or terminals for connecting the IGBT and external circuits. Some models include built-in safety features and standard resistive/test loads. This apparatus is commonly used in educational laboratories, technical training programs, and R&D for power electronics to illustrate and explore the unique features and applications of IGBTs.

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